High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator
![Spin-LED structure with a single InGaAs/GaAs QW. The CoFeB/ MgO/GaAs... | Download Scientific Diagram Spin-LED structure with a single InGaAs/GaAs QW. The CoFeB/ MgO/GaAs... | Download Scientific Diagram](https://www.researchgate.net/profile/Julien-Frougier/publication/263813751/figure/fig1/AS:296572593164288@1447719824058/Spin-LED-structure-with-a-single-InGaAs-GaAs-QW-The-CoFeB-MgO-GaAs-spin-injector-layers.png)
Spin-LED structure with a single InGaAs/GaAs QW. The CoFeB/ MgO/GaAs... | Download Scientific Diagram
Performance of GaAs smart pixel components before and after monolithic integration of InGaP LEDs using Epitaxy-on-Electronics technology
![Characteristics of gallium arsenide (GaAs) light emitting diode for wireless systems - ScienceDirect Characteristics of gallium arsenide (GaAs) light emitting diode for wireless systems - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S2214785321042772-gr2.jpg)
Characteristics of gallium arsenide (GaAs) light emitting diode for wireless systems - ScienceDirect
![Effect of interface recombination on the efficiency of intracavity double diode structures | SpringerLink Effect of interface recombination on the efficiency of intracavity double diode structures | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1007%2Fs11082-019-1920-y/MediaObjects/11082_2019_1920_Fig5_HTML.png)
Effect of interface recombination on the efficiency of intracavity double diode structures | SpringerLink
![A novel vacuum epitaxial lift-off (VELO) process for separation of hard GaAs substrate/carrier systems for a more green semiconductor LED production - ScienceDirect A novel vacuum epitaxial lift-off (VELO) process for separation of hard GaAs substrate/carrier systems for a more green semiconductor LED production - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S1369800117305656-gr1.jpg)
A novel vacuum epitaxial lift-off (VELO) process for separation of hard GaAs substrate/carrier systems for a more green semiconductor LED production - ScienceDirect
![Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission | Scientific Reports Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission | Scientific Reports](https://media.springernature.com/m685/springer-static/image/art%3A10.1038%2Fs41598-017-11239-4/MediaObjects/41598_2017_11239_Fig1_HTML.jpg)
Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission | Scientific Reports
![a) Scheme of AlGaAs/GaAs-based LED with 2D periodic structure of square... | Download Scientific Diagram a) Scheme of AlGaAs/GaAs-based LED with 2D periodic structure of square... | Download Scientific Diagram](https://www.researchgate.net/profile/Anna-Bencurova/publication/273473908/figure/fig1/AS:391833944379393@1470431900232/a-Scheme-of-AlGaAs-GaAs-based-LED-with-2D-periodic-structure-of-square-symmetry-in-the_Q640.jpg)
a) Scheme of AlGaAs/GaAs-based LED with 2D periodic structure of square... | Download Scientific Diagram
Efficient light extraction in subwavelength GaAs/AlGaAs nanopillars for nanoscale light-emitting devices
![Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector: Applied Physics Letters: Vol 108, No 15 Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector: Applied Physics Letters: Vol 108, No 15](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/1.4945768&id=images/medium/1.4945768.figures.f1.gif)